Temperature Instability of Resistive Switching on HfOx-Based RRAM Devices

In this letter, the temperature instability of HfOx-based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 degrees C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.