期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 6, 页码 600-602出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2045873
关键词
NiOx; pulse programming; resistive random access memory (ReRAM)
Oscillations in the transient current profiles of NiOx resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the un-stably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.
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