期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 11, 页码 1227-1229出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2068273
关键词
Atomic force microscopy (AFM); in-plane gate transistors
资金
- National Science Council, Taiwan [NSC 99-2628-E-001-001, NSC 99-2911-I-001-010]
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.
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