Screen-Printed Aluminum-Alloyed P+ Emitter on High-Efficiency N-Type Interdigitated Back-Contact Silicon Solar Cells

We demonstrate the use of industrial-orientated screen-printed aluminum-alloyed p(+) emitter for high-efficiency n-type interdigitated back-contact silicon solar cells. Different cell designs with various pitch sizes and emitter fractions have been studied. With an improved front surface field (FSF), short-circuit current densities up to 40 mA/cm(2) can be obtained. By combining the best cell design and the improved FSF, a high conversion efficiency of 19.1% with Czochralski n-type material has been achieved.