期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 5, 页码 431-433出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2044012
关键词
Staggered heterojunction; tunneling FET
资金
- National Science Foundation
This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3 V. A representative implementation is predicted to achieve an ON-state current drive of 0.4 mA/mu m with an OFF-state current of 50 nA/mu m. Comparison with homojunction counterparts reveals that the hetero-tunnel-junction implementations may address better the design tradeoff between ON-state drive and OFF-state leakage.
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