期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 5, 页码 422-424出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2044013
关键词
Ge; plastic substrate; Schottky-barrier source/drain (S/D); thin-film transistor (TFT); wafer bonding
资金
- National Science Council (NSC), Taiwan [NSC 98-2218-E-002-001-]
Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain (S/D) on flexible polyimide substrates are fabricated by a simple low-temperature process (<= 250 degrees C), which preserves the high mobility of Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the single-crystalline Ge thin film onto polyimide substrates. The Schottky-barrier S/D is formed by using Pt/n-Ge contact, showing a low hole barrier height. The device has a linear hole mobility of similar to 170 cm(2).V(-1).s(-1) and a saturation current of similar to 1.6 mu A/mu m at V(d) = -1.5 V for the channel length and width of 15 and 280 mu m, respectively.
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