期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 2, 页码 126-128出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2037593
关键词
Embedded memory; resistive random access memory (RRAM); tungsten oxide; unipolar operation
资金
- National Science Council of Taiwan [NSC 98-2112-M-030-002]
The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
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