期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 1, 页码 68-70出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2034876
关键词
Access resistance; dual gate; field-effect transistor (FET); graphene; radio frequency (RF)
资金
- Defense Advanced Research Projects Agency [FA8650-08-C-7838]
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm(2)/V . s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This f(T) value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.
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