期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 7, 页码 644-646出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2047231
关键词
Carbon nanotube (CNT); field-effect transistor (FET); length scaling; local gate; multichannel array
资金
- FENA Focus Center
- National Science Foundation
A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density > 40 mu A/mu m (with no metallic nanotubes), inverse subthreshold slope of 70 mV/decade, and ON/OFF-current ratio > 10(5). Additionally, ON-current from LBG-CNTFETs is shown to scale linearly with the number of nanotube channels. These advancements in device geometry and performance provide a new platform for further progress to be made toward high-performance FETs from aligned nanotubes.
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