Current Scaling in Aligned Carbon Nanotube Array Transistors With Local Bottom Gating

A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density > 40 mu A/mu m (with no metallic nanotubes), inverse subthreshold slope of 70 mV/decade, and ON/OFF-current ratio > 10(5). Additionally, ON-current from LBG-CNTFETs is shown to scale linearly with the number of nanotube channels. These advancements in device geometry and performance provide a new platform for further progress to be made toward high-performance FETs from aligned nanotubes.