期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 4, 页码 311-313出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2040130
关键词
Display device; indium zinc oxide (IZO); solution process; thin-film transistor (TFT)
We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm(2)/V . s, threshold voltages of -0.30 V, turn-on voltages of -1.50 V, on/off ratios of 10(9), and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs.
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