期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 10, 页码 1089-1091出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2058844
关键词
Capacitance coupling; electrostatic discharge (ESD); silicon-controlled rectifiers (SCR); trigger voltage
资金
- Zhejiang Provincial Natural Science Foundation of China [Y1080546, Y107055]
A novel capacitance-coupling-triggered silicon-controlled rectifier (CCTSCR) for on-chip electrostatic discharge (ESD) protection is proposed and verified in a 65-nm logic CMOS process. The trigger voltage of the CCTSCR can be adjusted by using a variable coupling capacitor, and a low trigger voltage of 2.15 V can be achieved through increasing the coupling capacitance. Compared with the conventional diode-triggered SCR, the CCTSCR has a similar robustness but a lower leakage current, particularly at an elevated temperature. The CCTSCR is suitable for I/O ESD protection of low-voltage CMOS integrated circuits.
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