4.6 Article

Bilayer Graphene System: Current-Induced Reliability Limit

期刊

IEEE ELECTRON DEVICE LETTERS
卷 31, 期 10, 页码 1155-1157

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2058994

关键词

Bilayer graphene (BLG); breakdown; maximum current density; reliability

资金

  1. Directorate For Engineering
  2. Div Of Electrical, Commun & Cyber Sys [1002228] Funding Source: National Science Foundation

向作者/读者索取更多资源

We investigate the key reliability limiting factors of bilayer graphene (BLG) under current stressing by examining the breakdown characteristics of BLG with chemical-mechanical planarization copper contacts. It is observed that dc current-induced thermal annealing helps to reduce the BLG-to-Cu contact resistance. Breakdown occurs with two noticeably different failure modes depending on local stressing current level, while copper contact damage dominates in scaled structure. The measured linear dependence of breakdown current on graphene width/length aspect ratio suggests Joule heating as the primary breakdown mechanism.

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