期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 10, 页码 1071-1073出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2057404
关键词
DTMOS; modeling; strain; zero temperature coefficient (ZTC)
资金
- National Science Council, Taiwan [NSC-97-2221-E-009-153-MY3]
For the first time, analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower V(g) (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
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