期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 4, 页码 260-262出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2040132
关键词
Field-effect mobility; graphene; n-FET; p-FET; Si MOSFET; transistor
资金
- Defense Advanced Research Projects Agency (DARPA), Space and NavalWarfare (SPAWAR) [N66001-08-C-2048]
In this letter, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on Si-face 6H-SiC substrates on 50-mm wafers. The current-voltage characteristics of these devices show excellent saturation with ON-state current densities (I(on)) of 0.59 A/mm at V(ds) = 1 V and 1.65 A/mm at V(ds) = 3 V. I(on)/I(off) ratios of 12 and 19 were measured at V(ds) = 1 and 0.5 V, respectively. A peak extrinsic g(m) as high as 600 mS/mm was measured at V(ds) = 3.05 V, with a gate length of 2.94 mu m. The field-effect mobility versus effective electric field (E(eff)) was measured for the first time in epitaxial graphene FETs, where record field-effect mobilities of 6000 cm(2)/V . s for electrons and 3200 cm(2)/V . s for holes were obtained at E(eff) similar to 0.27 MV/cm.
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