期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 9, 页码 904-906出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2026718
关键词
Al2O3 passivation; GaN; gate recess; high-electron mobility transistor (HEMT); high transconductance; InAlN; SiC substrate
资金
- Office of Naval Research MINE MURI
- Air Force Research Laboratory [FA8650-08-C-1443]
- Korea Foundation for Advanced Studies
We studied submicrometer (L-G = 0.15-0.25 mu m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-mn Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of I-DS,I-max = 1.5 A/mm and a record peak extrinsic transconductance of g(m,ext) = 675 mS/mm. The thin Al2O3 passivation improved the sheet resistance and the transconductance of these devices by 15% and 25%, respectively, at the same time that it effectively suppressed current collapse.
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