期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 6, 页码 611-613出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2020182
关键词
Graphene; nanoribbon; resistivity
资金
- Interconnect Focus Center (IFC), DARPA/SRC Focus Center
- e Nanoelectronics Research Initiative (NRI) through the INDEX Center
Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth (18 nm < W < 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据