4.6 Article

Resistivity of Graphene Nanoribbon Interconnects

期刊

IEEE ELECTRON DEVICE LETTERS
卷 30, 期 6, 页码 611-613

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2020182

关键词

Graphene; nanoribbon; resistivity

资金

  1. Interconnect Focus Center (IFC), DARPA/SRC Focus Center
  2. e Nanoelectronics Research Initiative (NRI) through the INDEX Center

向作者/读者索取更多资源

Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth (18 nm < W < 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

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