期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 5, 页码 457-459出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2015687
关键词
GdOx; bilayer; nonvolatile memory (NVM); resistance random access memory (ReRAM)
资金
- National Research Program
- Korea Science and Engineering Foundation (KOSEF)
- National Research Foundation of Korea [2008-0060067] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10(4) cycles, and ten years of data retention at 85 degrees C. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.
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