Resistive Switching in CeOx Films for Nonvolatile Memory Application

Al/CeOx/Pt devices with nonstoichiometric CeOx (1.5 < x < 2) films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electro-forming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies in CeOx films is proposed to explain the observed RS behaviors.