GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel

We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar < 110 > GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of similar to 150 mV/dec, maximum g(m) of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of similar to 4100 cm(2)/V . s with corresponding electron concentration of 2.3 . 10(17) cm(-3) is derived by fitting the experimental data using a self-consistent long channel field effect device model.