期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 6, 页码 593-595出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2019769
关键词
Charge carrier mobility; field-effect transistors (FETs); nanotechnology; semiconductor materials
资金
- National Science Foundation [ECCS 07-47178]
We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar < 110 > GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of similar to 150 mV/dec, maximum g(m) of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of similar to 4100 cm(2)/V . s with corresponding electron concentration of 2.3 . 10(17) cm(-3) is derived by fitting the experimental data using a self-consistent long channel field effect device model.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据