期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 8, 页码 861-863出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2023824
关键词
Capping layer; HfAlO; MoN; p-MOSFETs
资金
- NSC [97-2120-M-009-008]
By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm(2)/(V . s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 degrees C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.
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