期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 8, 页码 870-872出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2024650
关键词
Conduction mechanism; memory; resistive switching; silicon monoxide (SiO)
资金
- National Natural Science Foundation of China [60625403, 90207004]
- 973 Projects [2006CB302701]
In this letter, a reliable nonvolatile resistive switching device based on silicon monoxide (SiO) is demonstrated. The device was fabricated with a low-temperature process that can be compatible with a CMOS back-end process and attractive for 3-D memory integration. The fabricated Cu/SiO/W device was found to have a repeatable unipolar resistive switching behavior. The results show excellent on/off resistance ratio (over 10(4)) and good retention performance. The switching mechanism of the device is analyzed by experimental data and probably can be attributed to the behaviors of copper ions in the bulk of SiO under different voltages.
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