期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 2, 页码 103-106出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2010340
关键词
CVD; epitaxial layers; FETs; gallium compounds; MODFETs; resistance heating
资金
- EPSRC
- Ferdinand Braun Institute by ESA
- Swedish Foundation for Strategic Research
- EPSRC [EP/D045304/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D045304/1] Funding Source: researchfish
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.
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