期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 12, 页码 1269-1271出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2032937
关键词
Hafnium oxide; thermal conductivity; thermal interface resistance; picosecond pump-probe thermometry
资金
- Semiconductor Research Corporation
- MARCO Interconnect Focus Center
- Defense University
- Stanford Graduate Fellowship
- Stanford Initiative in Nanoscale Materials and Processes
Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-angstrom-thick HfO2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/( m . K). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据