期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 8, 页码 876-878出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2024623
关键词
CBRAM; chalcogenide; nonvolatile memory; reliability; retention
Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated.
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