期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 11, 页码 1212-1214出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2031418
关键词
Low-field mobility; nonequilibrium Green's function; quasi-ballistic transport; silicon nanowire (SiNW)
资金
- French ANR
- EU NANOSIL NoE [216171]
We investigate the role of two main scattering mechanisms responsible for mobility degradation in ultrashort electron devices like silicon-nanowire FETs. We consider electron-phonon interaction and surface roughness (SR) at the Si/SiO2 interface as sources of inelastic and elastic scatterings. We address a full-quantum treatment within the nonequilibrium Green's function formalism, which allows us to take quantum confinement, quantum-phase interference, out of equilibrium, and quasi-ballistic transport into account. Our results show that both phonon- and SR-limited mobilities strongly depend on the channel length due to the importance of nonuniform scattering in ultrashort devices and contribute to understand the strong mobility reduction of decananometric devices.
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