期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 5, 页码 547-549出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2016443
关键词
Frequency doublers; frequency multipliers; full-wave rectifiers; graphene field-effect transistors (G-FETs)
资金
- MIT/Army Institute for Soldier Nanotechnologies (ISN)
- Interconnect Focus Center (SRC/FCRP IFC)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0845358] Funding Source: National Science Foundation
In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultra-high frequencies.
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