4.6 Article

Graphene Frequency Multipliers

期刊

IEEE ELECTRON DEVICE LETTERS
卷 30, 期 5, 页码 547-549

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2016443

关键词

Frequency doublers; frequency multipliers; full-wave rectifiers; graphene field-effect transistors (G-FETs)

资金

  1. MIT/Army Institute for Soldier Nanotechnologies (ISN)
  2. Interconnect Focus Center (SRC/FCRP IFC)
  3. Direct For Mathematical & Physical Scien
  4. Division Of Materials Research [0845358] Funding Source: National Science Foundation

向作者/读者索取更多资源

In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultra-high frequencies.

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