期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 2, 页码 100-102出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2010067
关键词
AlGaN/GaN; GaN; high electron mobility transistor (HEMT); kink effect
资金
- EDA
- Italian Ministry for University and Research
An anomalous kink effect has been observed in the room-temperature drain current I-D versus drain voltage V-DS characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low V-DS) and subsequent release (at high V-DS) of negative charge, resulting in a shift of pinch-off voltage V-P toward more negative voltages and in a sudden increase in I-D. The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup.
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