期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 2, 页码 145-147出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2010065
关键词
Silicon-on-insulator technology; thin films; thin-film transistors (TFTs)
We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 urn by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm(2)/V . s, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.
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