期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 8, 页码 824-826出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2000921
关键词
converter; efficiency; GaN; high voltage; high-electron-mobility transistors (HEMTs); power device; switching power supply
A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed and low on-resistance of the wide-band-gap device enabled extremely fast switching transients and low losses, resulting in a high conversion efficiency of 97.8% with 300-W output power at 1 MHz. The maximum efficiency was 98.0% at 214-W output power, well exceeding the state of the art of Si-based converters at similar frequencies.
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