期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 5, 页码 416-418出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.919779
关键词
AlGaN; communication; FETs; GaN; heat diffusion; high-electron mobility transistors (HEMTs); nanosecond; pulsed; radar; Raman spectroscopy; reliability; temperature; thermography
资金
- EPSRC [EP/D045304/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D045304/1] Funding Source: researchfish
Time-resolved Raman thermography, with a temporal resolution of similar to 10 ns, was used to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices). Heat diffusion from the device active region into the substrate and within the devices was studied. Delays in the thermal response with respect to the electrical pulse were determined at different locations in the devices. Quasi-adiabatic heating of the AlGaN/GaN devices is illustrated within the first similar to 70 ns of device operation. The temperature of devices on SiC was found to reach similar to 25% of the dc temperature when operated with 200-ns-long electrical pulses.
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