期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 7, 页码 704-707出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.923540
关键词
germanium-on-silicon-on-insulator (Ge-on-SOI); metal-semiconductor-metal (MSM) photodetector; Schottky barrier; silicon-carbon (Si : C)
This letter reports the first demonstration of an evanescent coupled germanium-on-silicon-on-insulator (Ge-on-SOI) metal-semiconductor-metal (MSM) photodetector with a novel silicon-carbon (Si:C) Schottky barrier enhancement layer. Through the insertion of a Si:C barrier layer between the metal/Ge interface, the hole Schottky barrier height phi(bh) can effectively be enhanced to similar to 0.52 eV above the valence band edge. As a result, significant dark-current I-Dark suppression by more than four orders of magnitude was demonstrated, leading to an impressive I-Dark of similar to 11.5 nA for an applied bias V-A of 1.0 V. Optical measurements performed at a photon wavelength of 1550 rim revealed the achievement of good internal responsivity and quantum efficiency of similar to 530 mA/W and 42.4%, respectively, making such a high-performance Ge-on-SOI MSM photodetector a promising option for optical communication applications.
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