4.6 Article

Monolithic CMOS MEMS oscillator circuit for sensing in the attogram range

期刊

IEEE ELECTRON DEVICE LETTERS
卷 29, 期 2, 页码 146-148

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.914085

关键词

Allan deviation; CMOS-microelectromechanical system (MEMS); micromechanical oscillator; microsensor; resonant sensing; system-on-chip (SoC)

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This letter presents the design, fabrication, and demonstration of a CMOS/microelectromechanical system (MEMS) electrostatically self-excited resonator based on a submicrometer-scale cantilever with similar to 1 ag/Hz mass sensitivity. The mechanical resonator is the frequency-determining element of an oscillator circuit monolithically integrated and implemented in a commercial 0.35-mu m CMOS process. The oscillator is based on a Pierce topology adapted for the MEMS resonator that presents a mechanical resonance frequency of similar to 6 MHz, a relative low quality factor of 100, and a large motional resistance of similar to 25 M Omega. The MEMS oscillator has a frequency stability of similar to 1.6 Hz resulting in a mass resolution of similar to 1 ag (1 ag = 10(-18) g) in air conditions.

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