Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 min. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.