期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 10, 页码 1105-1107出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2000945
关键词
high kappa; metal-insulator-metal (MIM); plasma treatment; TiHfO
资金
- Tokyo Electron Ltd
We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 x 10(-6) A/cm(2) (at -1 V) at a 28 fF/mu m(2) capacitance density.
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