期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 10, 页码 1112-1114出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2003012
关键词
design automation; nonvolatile memories; phase-change memory (PCM); thermal boundary resistance
资金
- National Defense Science and Engineering Graduate (NDSEG) fellowship
- Intel Corporation
Thermal conduction governs the writing time and energy of phase-change memory (PCM) devices. Recent measurements demonstrated large thermal resistances at the interfaces of phase-change materials with neighboring electrode and passivation materials. In this letter, electrothermal simulations quantify the impact of these resistances on the set to reset transition. The programming current decreases strongly with increasing boundary resistance due to increased lateral temperature uniformity, which cannot be captured using a reduced effective conductivity in the phase-change material. Reductions in programming current from 20% to 30% occur for an interface resistance of 50 m(2) . K/GW. The precise spatial distribution of thermal properties is critical for the simulation of PCM devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据