期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 7, 页码 805-807出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2000613
关键词
gate-all-around (GAA); germanium-on-insulator (GeOI); MOSFET; rapid melt growth (RMG)
Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, Al2O3 high-k gate dielectric, and self-aligned NiGe contacts. The subthreshold swing is 71 mV/dec, which is better than those of the bulk and nanowire Ge p-MOSFETs reported to date. Planar GeOI p-MOSFET arrays show 40% hole mobility enhancement at a high effective field, which is as good as bulk Ge devices.
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