期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 5, 页码 449-451出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.920466
关键词
curve fitting; fill factor; J-V model; parasitic resistances; solar cell
An accurate J-V equation of a practical solar cell is inherently implicit, which necessitates iterative calculations to determine the fill factor and the peak power point. We propose a simple explicit power-law J-V model that is applicable to a wide variety of solar cells. The model allows an easy prediction of the entire J-V curve, peak power point, and fill factor from four simple measurements of the bias points corresponding to V-oc, similar to 0.6 V-oc, J(sc), and similar to 0.6 J(sc), where V-oc is the open-circuit voltage and J(sc) is the short-circuit current density. The model also provides a closed-form description of the J-V curve, peak power point, and fill factor in terms of physical parameters of the single exponential model.
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