期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 11, 页码 1181-1183出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2004569
关键词
Oxide/semiconductor interface; photoluminescence intensity (PL-I); III-V MOSFET; III-V semiconductor
资金
- SVT Associates
Photoluminescence intensity (PL-I) data are presented for 22 dielectric/GaAs systems investigated for MOSFET applications. The PL-I technique has been identified as a most useful and reliable tool for screening dielectric/GaAs interfaces and has been instrumental in the identification of a device quality dielectric/GaAs interface: in situ deposited Ga2O3 on GaAs. The early discovery of such an interface has allowed us to focus resources and to succeed to manufacture GaAs MOSFETs which perform in line with theoretical model predictions after more than 40 years of failed attempts. It is strongly recommended to extend the technique to the investigation of CMOS relevant channel materials such as InGaAs.
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