期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 4, 页码 372-374出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.917816
关键词
gate delay; MOSFET; nanowire/tube; one-dimensional (1-D); quantum capacitance; scaling
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems.
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