期刊
IEEE ELECTRON DEVICE LETTERS
卷 29, 期 10, 页码 1108-1111出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2002879
关键词
nonvolatile memory (NVM); resistive random access memory (RRAM); resistive switching; stabilization; SrZrO3
资金
- Winbond Electronics Corporation
- National Science Council, Taiwan, R.O.C. [NSC 96-2628-E-009-166-MY3]
The stabilization of the resistive switching properties is necessary to realize the memory application of the SrZrO3 (SZO)-based resistive switching devices. During continuous resistive switching cycle, broad variations of the resistive switching parameters of the SZO-based memory devices can be improved by a thin embedded Cr layer. The Cr metal layer is proposed to diffuse into and dope the SZO thin film to produce the space charge region, further reducing the effective resistive switching region. Hence, the good stabilization of the resistive switching properties can be obtained in the SZO films with embedded Cr layer.
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