Article
Physics, Applied
Ruizhi Yang, Yunkai Li, Wanpeng Lin, Jun Xu, Lige Wang, Jing Liu
Summary: Selenium selenide (SnSe) has gained attention for its environmental friendliness and low thermal conductivity. Single-crystal SnSe has high thermoelectric properties but is mechanically weak and difficult to manufacture, making it not suitable for commercial usage. Polycrystalline SnSe is easier to synthesize but has poor thermoelectric performance. In this study, polycrystalline SnSe samples are prepared using hydrothermal synthesis combined with vacuum sintering, and their thermoelectric properties are modified through alkali metal element doping.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
Yi Liu, Jiangtao Xu, Pingan Liu
Summary: In this study, the melting and annealing behaviors of aluminum nanoparticles were simulated using the ReaxFF reactive force field. The physical properties of aluminum and aluminum oxide were effectively reflected in the simulations. The presence of an oxide layer has an impact on the annealing behavior.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
L. Derbali, F. Bouhjar, A. Derbali
Summary: This study reports on the deposition of highly transparent conducting n-type zinc oxide (ZnO) thin films on FTO substrates, using an optimized doping process. The results showed that 4% vanadium (V) doping significantly enhances the crystallinity of the thin films, improves the electrical conductivity and reduces deep level defects in ZnO. The V-doped ZnO thin films exhibit high transparency, enhanced UV emission, and improved carrier mobility, leading to higher photocatalytic performance.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
Probhu Mandal, Ajay Kumar Ghosh
Summary: In this paper, we have extracted the transport critical current density (Jc) of BaZrO3 added YBa2Cu3O7-delta by using several low electric field criteria. The temperature dependence of Jc and JcG is strongly affected by the choice of electric field criteria, especially at lower temperatures. We have also studied how different criteria may change the extraction of associated coefficients and found that the extrapolated Jc and JcG are highly sensitive to the criteria used.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
P. Chandini Pattanaik, S. Jena, S. R. Mishra
Summary: This study investigates the two-dimensional time-dependent flow of nanofluid over a permeable stretching or sinking sheet. The inclusion of a transverse magnetic field, magnetic dissipation, and thermal radiation enriches the flow phenomena. The use of nanofluids is of increasing importance in various industrial applications, as well as engineering and biomedicine.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
Shyam Lal Gupta, Sumit Kumar, Samjeet Singh Anupam, Samjeet Singh Thakur, Sanjay Panwar, Diwaker
Summary: This study investigates the structural, electronic, mechanical, and thermoelectric properties of the iridium-based Heusler alloys Ir2V (In, Sn). The alloys exhibit half-metallic behavior, with large magnetic moments and mechanical stability, making them promising candidates for high-temperature thermoelectric applications.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
Zhenghao Cai, Zhiwen Wang, Hongyu Zhao, Ming Li, Bowei Li, Liangchao Chen, Hongan Ma, Xiaopeng Jia
Summary: In this study, the growth characteristics and surface growth process of diamond crystals were further investigated by controlling the impurity content. The results showed that the spontaneous nucleation rate, growth characteristics, and impurity concentration of diamond crystals were significantly affected by the introduction of impurities. The presence of impurities blocked the mutual diffusion between the metal solvent and carbon source, resulting in a decrease in the growth rate of diamond crystals and hindering the surface processes of diamond growth.
MODERN PHYSICS LETTERS B
(2024)
Article
Physics, Applied
Muhammad Farooq, Hijaz Ahmad, Dilber Uzun Ozsahin, Alamgeer Khan, Rashid Nawaz, Bandar Almohsen
Summary: This paper investigates the Poiseuille flow of non-isothermal couple stress fluid of Reynolds model between two heated parallel inclined plates using the AHPM and OHAM-DJ methods. The approximate solutions for various flow properties are obtained and compared, showing excellent resemblance between the two methods.
MODERN PHYSICS LETTERS B
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Chemistry, Physical
Yifan Liu, Fei Lu, Chang Liu, Qingyun Li, Yu Li, Yuanfeng Xu
Summary: This study explores the waveguide properties of graphene integrated with LiNbO3 and finds significant enhancements in effective index and coupling efficiency upon graphene coverage. The results demonstrate the feasibility of graphene as an electrode and lay the foundation for future research on high-speed optical modulators.
APPLIED SURFACE SCIENCE
(2024)
Article
Chemistry, Physical
Qi-Wen Chen, Ze-Qing Guo, Jian-Ping Zhou
Summary: Multifunctional continuous solid solutions NFMTO-x were successfully synthesized via a one-step hydrothermal method by controlling the ratio of Mg and Fe. The NFMTO-x materials exhibited enhanced visible light response, effective adsorption and photocatalytic degradation of organic pollutants, CO2 methanation capability, and easy recyclability due to their magnetic properties. This research provides a significant multifunctional material for water purification.
APPLIED SURFACE SCIENCE
(2024)
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Chemistry, Physical
Wen-Bin Wu, Julia Kasiuk, Janusz Przewoznik, Czeslaw Kapusta, Ivan Svito, Dang Thanh Tran, Hung Manh Do, Hung Manh Dinh, Johan Akerman, Thi Ngoc Anh Nguyen
Summary: We studied the magnetoresistance mechanisms in a Pt/[Co/Pt]x5 film consisting of a ferromagnetic [Co/Pt]x5 layer with strong perpendicular magnetic anisotropy and a nonmagnetic Pt layer with strong spin-orbit coupling. Two competing contributions, sin2 theta and cos4 theta, were revealed in the electrical resistance of the film at different angles and magnetic fields, corresponding to the out-of-plane rotation of the magnetization M(theta) perpendicularly to the electric current. The cos4 theta contribution is attributed to the anisotropic magnetoresistance of the ferromagnetic layer, while the sin2 theta contribution is mainly associated with the spin Hall magnetoresistance originating from the Pt layer. The strong influence of the electric current on the magnetization of the film is of high relevance for magnetic memory design technologies.
APPLIED SURFACE SCIENCE
(2024)
