Journal
ACS NANO
Volume 9, Issue 2, Pages 1622-1629Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn506341u
Keywords
graphene; ultrasensitivity; controllable size; tunneling effect; artificial electronic skin
Categories
Funding
- National Basic Research Program of China (973 Program) [2013CB934500, 2012CB921302, 2013CBA01602]
- National Science Foundation of China (NSFC) [91223204, 61325021, 61390503, 11204358, 11174333]
- Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB07010100]
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Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of similar to 100 K Omega/square, a gauge factor of more than 600 can be achieved, which is 50X larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 10(4) cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.
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