Journal
ACS NANO
Volume 9, Issue 10, Pages 9964-9973Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b05342
Keywords
IGZO; hydrogen doping; photochemistry; 2 DEG; metallic conduction
Categories
Funding
- National Research Foundation (NRF) of MEST [NRF-2014M3A7-B4049368]
- ICT
- Future Planning of MEST, Republic of Korea
- NRF - Ministry of Science, ICT & Future Planning [NRF-2013R1A1A2064715]
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The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature. In contrast to thermal or ionic hydrogen doping, ultraviolet exposure of the IGZO surface promotes a photochemical reaction with H radical incorporation to surface metal-OH layer formation and bulk H-doping which acts as a tunable and stable highly doped n-type doping channel and turns IGZO to a transparent conductor. This results in the total conversion of carrier conduction property to the level of metallic conduction with sheet resistance of similar to 16 Omega/square, room temperature Hall mobility of 11.8 cm(2) V-1 sec(-1), the carrier concentration at similar to 10(20) cm(-3) without any loss of optical transparency. We demonstrated successful applications of photochemically highly n-doped metal oxide via optical dose control to transparent conductor with excellent chemical and optical doping stability.
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