Journal
ACS NANO
Volume 9, Issue 2, Pages 2071-2079Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn507278b
Keywords
transition metal dichalcogenide; electron tunneling; negative differential resistance; TFET; steep; 2D
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Funding
- Center for Low Energy Systems Technology (LEAST) - STARnet phase of the Focus Center Research Program (FCRP)
- Semiconductor Research Corporation program - MARCO
- DARPA
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- NSF E3S
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Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of similar to 80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.
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