Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

Despite heightened interest in 2D transition-metal dichalcogenide (TMD) doping methods for future layered semiconductor devices, most doping research is currently limited to molybdenum disulfide (MoS2), which is generally used for n-channel 2D transistors. In addition, previously reported TMD doping techniques result in only high-level doping concentrations (degenerate) in which TMD materials behave as near-metallic layers. Here, we demonstrate a controllable nondegenerate p-type doping (p-doping) technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of octadecyltrichlorosilane (OTS). This p-doping phenomenon originates from the methyl (-CH3) functional groups in OTS, which exhibit a positive pole and consequently reduce the electron carrier density in WSe2. The controlled p-doping levels are between 2.1 X 10(11) and 5.2 X 10(11) cm(-2) in the nondegenerate regime, where the performance parameters of WSe2-based electronic and optoelectronic devices can be properly designed or optimized (threshold voltage up arrow, on-/off-currents up arrow, field-effect mobility down arrow, photoresponsivity down arrow, and detectivity? as the doping level increases). The p-doping effect provided by OTS is sustained in ambient air for a long time showing small changes in the device performance (18-34% loss of Delta V-TH initially achieved by OTS doping for 60 h). Furthermore, performance degradation is almost completely recovered by additional thermal annealing at 120 degrees C. Through Raman spectroscopy and electrical/optical measurements, we have also confirmed that the OTS doping phenomenon is independent of the thickness of the WSe2 films. We expect that our controllable p-doping method will make it possible to successfully integrate future layered semiconductor devices.