4.8 Article

Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

Journal

ACS NANO
Volume 10, Issue 2, Pages 1738-1743

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b05927

Keywords

metal phosphorus trichalcogenides; two-dimensional semiconductors; cleavage energy; band gap; Raman spectroscopy

Funding

  1. National Research Foundation, Prime Minister's Office, Singapore
  2. Singapore Ministry of Education [MOE2013-T2-1-049, 2013-T1-002-232, MoE AcRT RG125/14]
  3. AFOSR via its Asian Office of Aerospace Research Development [FA2368-13-1-4112]

Ask authors/readers for more resources

2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available