Related references
Note: Only part of the references are listed.Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in VO2
A. Zimmers et al.
PHYSICAL REVIEW LETTERS (2013)
Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition
V. Ta Phuoc et al.
PHYSICAL REVIEW LETTERS (2013)
Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers
J. Tranchant et al.
THIN SOLID FILMS (2013)
Metal oxide memories based on thermochemical and valence change mechanisms
J. Joshua Yang et al.
MRS BULLETIN (2012)
Memory effects in complex materials and nanoscale systems
Yuriy V. Pershin et al.
ADVANCES IN PHYSICS (2011)
First evidence of resistive switching in polycrystalline GaV4S8 thin layers
Emeline Souchier et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2011)
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
Laurent Cario et al.
ADVANCED MATERIALS (2010)
Nanoscale imaging and control of resistance switching in VO2 at room temperature
Jeehoon Kim et al.
APPLIED PHYSICS LETTERS (2010)
Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8
Eugen Dorolti et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)
Electric-Field-Assisted Nanostructuring of a Mott Insulator
Vincent Dubost et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Phase-transition driven memristive system
T. Driscoll et al.
APPLIED PHYSICS LETTERS (2009)
Electric-pulse-driven electronic phase separation, insulator-metal transition, and possible superconductivity in a Mott insulator
Cristian Vaju et al.
ADVANCED MATERIALS (2008)
Metal-metal bonding and correlated metallic behavior in the new deficient spinel Ga0.87Ti4S8
C. Vaju et al.
CHEMISTRY OF MATERIALS (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8
C. Vaju et al.
MICROELECTRONIC ENGINEERING (2008)
Phase-change memories
Andrea L. Lacaita et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
M. M. Qazilbash et al.
SCIENCE (2007)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Crystal structures, electronic properties, and pressure-induced superconductivity of the tetrahedral cluster compounds GaNb4S8, GaNb4Se8, and GaTa4Se8
R Pocha et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2005)
Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure -: art. no. 126403
MM Abd-Elmeguid et al.
PHYSICAL REVIEW LETTERS (2004)
Wide and narrow bandgap semiconductors for power electronics: A new valuation
JL Hudgins
JOURNAL OF ELECTRONIC MATERIALS (2003)
Share Paper
