Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8

The Mott insulator compounds AM(4)Q(8) exhibit a new type of volatile and non volatile resistive switchings that are of interest for RRAM application. We found that above a threshold electric field E (TH) of the order of a few kV/cm these compounds undergo a volatile resistive switching based on an avalanche process. For electric field much higher than the threshold avalanche breakdown field, the resistive switching turns non volatile. Our EDXS and STEM analyses show that the non volatile resistive switching originating from the avalanche breakdown can neither be ascribed to local chemical modifications nor to a local phase change with symmetry breaking at a resolution better than a few nanometer. This is in strong contrast with non volatile resistive switching reported so far that are all based on chemical or structural changes. Conversely, our results suggest that the avalanche breakdown induce the collapse of the Mott insulating state at the local scale and the formation of a granular conductive filament formed by compressed metallic domains and expanded superinsulating domains.