Journal
EUROPEAN PHYSICAL JOURNAL D
Volume 67, Issue 2, Pages -Publisher
SPRINGER
DOI: 10.1140/epjd/e2012-30484-6
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Funding
- Grants-in-Aid for Scientific Research [23310070] Funding Source: KAKEN
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The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40)(100-x)H-x (0 < x < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The I-d-V-g-B characteristics of the (Ni0.36Nb0.4Zr0.40)(90)H-10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.
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