Theoretical electron impact elastic, ionization and total cross sections for silicon hydrides, SiHx (x=1, 2, 3, 4) and disilane, Si2H6 from threshold to 5 keV

In this article we report comprehensive calculations of total elastic (Q(el)), and total ionization cross sections, (Q(ion)), on silicon hydrides SiHx (x = 1-4) and disilane, Si2H6 on electron impact at energies from circa threshold to 2000 eV and total (complete) cross sections (Q(T)) up to 5 keV. Spherical complex optical potential (SCOP) formalism is employed to evaluate Q(el) and Q(T). Total ionization cross sections, Q(ion), are derived from total inelastic cross sections, Q(inel), using our complex spherical potential - ionization contribution (CSP-ic) method. Dependence of Q(T) on the dipole polarizability of the target and incident energy is presented for these targets through analytical formula, using which calculation of Q(T) is extended up to 5 keV. Comparison of Q(T) for all these targets is carried out to present a general theoretical picture of collision processes and also to visualize the dependence of Q(T) on the total number of electrons in the target and hence on the geometrical size of the target. Present calculations also provide information on the excitation processes of these targets. Present results are compared with available experimental and other theoretical data wherever available and overall good agreement is observed. There is probably no data for total elastic and total (complete) cross sections for SiHx (x = 2-3) in the present energy range and hence reported for the first time.